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Sanyo Electric Components Datasheet

C4705 Datasheet

2SC4705

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Ordering number:EN3484
NPN Epitaxial Planar Silicon Transistor
2SC4705
Low-Frequency General-Purpose Amplifier,
Applications (High hFE)
Applications
· Low-frequency general-purpose amplifier, drivers,
muting circuits.
Features
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage :
VCE(sat)0.5V max.
· High VEBO : VEBO15V.
· Small size making it easy to provide high-density,
hybrid ICs.
Package Dimensions
unit:mm
2038A
[2SC4705]
4.5
1.6
0.4 0.5
32
1.5
1
3.0
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2× 0.8mm)
1.5
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Ratings
60
50
15
200
300
40
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
mA
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking :CP
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=40V, IE=0
VEB=10V, IC=0
VCE=5V, IC=100mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
Ratings
min typ
800 1500
250
4.0
max
0.1
0.1
3200
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12099HA (KT)/7190MH, TA (KOTO) No.3484–1/3


Sanyo Electric Components Datasheet

C4705 Datasheet

2SC4705

No Preview Available !

Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SC4705
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=100mA, IB=2mA
IC=100mA, IB=2mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
Ratings
min typ
0.12
0.85
60
50
15
max
0.5
1.2
Unit
V
V
V
V
V
No.3484–2/3


Part Number C4705
Description 2SC4705
Maker Sanyo
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C4705 Datasheet PDF






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