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C4705 - 2SC4705

Features

  • High DC current gain (hFE=800 to 3200).
  • Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max.
  • High VEBO : VEBO≥15V.
  • Small size making it easy to provide high-density, hybrid ICs. Package Dimensions unit:mm 2038A [2SC4705] 4.5 1.6 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications · Low-frequency general-purpose amplifier, drivers, muting circuits. Features · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage : VCE(sat)≤0.5V max. · High VEBO : VEBO≥15V. · Small size making it easy to provide high-density, hybrid ICs. Package Dimensions unit:mm 2038A [2SC4705] 4.5 1.6 0.4 0.5 32 1.5 1 3.0 0.
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