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C4695 - 2SC4695

Key Features

  • Adoption of FBET process.
  • High DC current gain.
  • High VEBO (VEBO≥25V).
  • High reverse hFE (150 typ).
  • Small ON resistance [Ron=1Ω (IB=5mA)].
  • Very small-sized package permitting 2SC4695- applied sets to be made small and slim. Package Dimensions unit:mm 2018B [2SC4695] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C4694 2SC4694
C4600 2SC4600
C4601 2SC4601
C4602 2SC4602
C4612 2SC4612

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Features · Adoption of FBET process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)]. · Very small-sized package permitting 2SC4695- applied sets to be made small and slim. Package Dimensions unit:mm 2018B [2SC4695] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.