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Sanyo Electric Components Datasheet

C4694 Datasheet

2SC4694

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Ordering number:EN3485
NPN Epitaxial Planar Silicon Transistor
2SC4694
Low-Frequency General-Purpose Amplifier,
Muting Applications
Features
· Adoption of MBIT process.
· High DC current gain.
· High VEBO (VEBO25V).
· High reverse hFE (150 typ).
· Small ON resistance [Ron=1(IB=5mA)].
· Very small-sized package permitting 2SC4694-
applied sets to be made small and slim.
Package Dimensions
unit:mm
2059B
[2SC4694]
0.3
3
0.15
0 to 0.1
12
0.65 0.65
2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking :WT
Symbol
Conditions
ICBO
IEBO
hFE1
fT
Cob
VCB=40V, IE=0
VEB=20V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
0.3 0.6
0.9
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Ratings
50
20
25
500
800
100
150
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ
300
250
3.6
max
0.1
0.1
1200
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12099HA (KT)/7190MH, TA (KOTO) No.3485–1/4


Sanyo Electric Components Datasheet

C4694 Datasheet

2SC4694

No Preview Available !

Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SC4694
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=100mA, IB=2mA
IC=100mA, IB=2mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
0.12
0.85
50
20
25
135
450
100
max
0.5
1.2
Unit
V
V
V
V
V
ns
ns
ns
No.3485–2/4


Part Number C4694
Description 2SC4694
Maker Sanyo
PDF Download

C4694 Datasheet PDF






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