* Adoption of MBIT process.
* High breakdown voltage (VCEO≥400V).
* Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused P.

Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 Specifications Absolute Maximum Ratings at Ta = 25˚C.

C4645

C4646

C4600

C4601

C4602

C4606

C460UT170

C460UT190

C461

C4612

C4613

C4615

C4616

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