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Sanyo Electric Components Datasheet

C4616 Datasheet

2SC4616

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Ordering number:EN3399C
Features
· Large current capacity (IC=2A).
· High breakdown voltage (VCEO400V).
2SA1773 : PNP Eppitaxial Planar Silicon Transistor
2SC4616 : NPN Triple Diffused Planar Silicon Transistor
2SA1773/2SC4616
High-Voltage Driver Applications
Package Dimensions
unit:mm
2045A
[2SA1773/2SC4616]
unit:mm
2044A
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SA1773/2SC4616]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83198HA (KT)/30395TS/12894TH AX-8287/D251MH/5300TA (KOTO) X-6470, 6459 No.3399–1/5


Sanyo Electric Components Datasheet

C4616 Datasheet

2SC4616

No Preview Available !

2SA1773/2SC4616
( ) : 2SA1773
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)100mA
VCE=(–)10V, IC=(–)100mA
VCB=(–)30V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
Storage Time
tstg See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SA1773/2SC4616 are classified by 100mA hFE as follows :
40 C 80 60 D 120 100 E 200
Switching Time Test Circuit
Ratings
(–)400
(–)400
(–)5
(–)2
(–)4
1
15
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
40*
(40)60
(25)15
(–)400
(–)400
(–)5
(0.12)
0.085
(3.0)
4.0
(0.3)
0.6
max
(–)1.0
(–)1.0
200*
(–)1.0
(–)1.0
Unit
µA
µA
MHz
pF
V
V
V
V
V
µs
µs
µs
µs
ns
µs
Unit (resistance : , capacitance : F)
No.3399–2/5


Part Number C4616
Description 2SC4616
Maker Sanyo
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C4616 Datasheet PDF






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