C4612
Features
- Adoption of MBIT process.
- High breakdown voltage, large current capacity.
- Fast switching speed.
Package Dimensions unit:mm 2064
[2SA1768/2SC4612]
( ) : 2SA1768
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage
ICBO IEBO h FE1 h FE2 f T Cob VCE(sat)
VCB=(- )120V, IE=0 VEB=(- )4V, IC=0 VCE=(- )5V, IC=(- )100m A VCE=(- )5V, IC=(- )10m A VCE=(- )10V, IC=- 50m A VCB=(- )10V, f=1MHz IC=250m A, IB=(- )25m A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=250m A, IB=(- )25m A
E : Emitter C : Collector B : Base
SANYO :...
