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Sanyo Electric Components Datasheet

C4548 Datasheet

2SC4548

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Ordering number:ENN3188
Features
· High breakdown votlage.
· Adoption of MBIT process.
· Excellent hFE linearlity.
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffuesd Planar Silicon Transistor
2SA1740/2SC4548
High-Voltage Driver Applications
Package Dimensions
unit:mm
2038A
[2SA1740/2SC4548]
4.5
1.6
1.5
0.4 0.5
3 1.5 2
3.0
1
0.75
( ) : 2SA1740
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on ceramic board (250mm2×0.8mm)
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Ratings
()400
()400
()5
()200
()400
1.3
150
55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()300V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE VCE=()10V, IC=()50mA
* The 2SA1740/2SC4548 are classified by 50mA hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
Ratings
min typ max
Unit
()0.1 µA
()0.1 µA
60* 200*
Continued on next page.
Marking 2SA1740 : AK
2SC4548 : CN
hFE rank : D, E
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40804TN (PC)/83098HA (KT)/7219YT, TS No.3188-1/4


Sanyo Electric Components Datasheet

C4548 Datasheet

2SC4548

No Preview Available !

2SA1740/2SC4548
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emiiter-to-Base Breakdown Voltage
Turn-ON Time
Turn-OFF Time
Symbol
Conditions
fT VCE=()30V, IC=()10mA
Cob VCB=()30V, f=1MHz
Cre VCB=()30V, f=1MHz
VCE(sat) IC=()50mA, IB=()5mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
toff
IC=()50mA, IB=()5mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
INPUT
PW=20µs
D.C.1%
50
IB1
IB2
RB
VR
+
100µF
OUTPUT
+
470µF
RL
VBE=--1V
VCC=150V
10IB1= --10IB2= IC=50mA
RL=3k, RB=200at IC=50mA
For PNP, the polarity is reversed.
Ratings
min typ
70
(5)4
(4)3
()0.8
0.6
()400
()400
()5
0.25
5.0
max
()1.0
Unit
MHz
pF
pF
V
V
V
V
V
V
µs
µs
IC -- VBE
--120
2SA1740
VCE=--10V
--100
--80
--60
--40
--20
0
0
5
3
2
100
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Base-to-Emitter Voltage, VBE – V ITR04445
hFE -- IC
2SA1740
VCE=--10V
Ta=70°C
25°C
--30°C
10
7
5
7 --1.0
2 3 5 7 --10 2 3 5 7 --100 2 3
Collector Current, IC – mA
ITR04447
IC -- VBE
120
2SC4548
VCE=10V
100
80
60
40
20
0
0
5
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V ITR04446
hFE -- IC
Ta=70°C
2SC4548
VCE=10V
25°C
--30°C
10
7
5
7 1.0
2 3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC – mA
ITR04448
No.3188-2/4


Part Number C4548
Description 2SC4548
Maker Sanyo
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C4548 Datasheet PDF






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