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C4522 - 2SC4522

Features

  • Adoption of FBET, MBIT process.
  • Large current capacity.
  • Low collector-to-emitter saturation voltage.
  • Fast switching speed. Package Dimensions unit:mm 2045B [2SC4522] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 1 : Base 0.5 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SC4522] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0~0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO :.

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Ordering number:EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Features · Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm 2045B [2SC4522] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 123 2.3 2.3 0.8 1.6 7.5 1.2 1 : Base 0.5 2 : Collector 3 : Emitter 4 : Collector SANYO : TP [2SC4522] 6.5 2.3 5.0 0.5 4 0.8 5.5 1.5 2.5 7.0 1.2 0.85 1 0.6 2 3 2.3 2.3 0.5 1.2 0~0.
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