C4520
Features
- Adoption of FBET, MBIT process.
- Large current capacity.
- Low collector-to-emitter saturation voltage.
- Fast switching speed.
- Small-sized package.
Package Dimensions unit:mm 2038A
[2SC4520]
4.5 1.6
1.0 2.5 4.25max
0.4 0.5
32 1.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions Mounted on ceramic board (250mm2× 0.8mm)
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Ratings 60 45 5 1.5 3 1.3
- 55 to +150
Unit V V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO h FE1 h FE2 f T Cob
VCB=45V, IE=0 VEB=3V, IC=0 VCE=2V, IC=100m A...
