NPN Epitaxial Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Video Output Applications
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high
frequency characteristic : Cre=1.3pF typ.
· Adoption of FBET process.
Absolute Maximum Ratings at Ta = 25˚C
Collector Current (Pulse)
The 2SC4188 is classified by 10mA hFE as follows :
hFE 40 to 80 60 to 120 100 to 200 160 to 320
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220AB
–55 to +150
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72204TN (PC)/82098HA (KT)/5118TA/4217TA, TS No.2557-1/4