Small reverse transfer capacitance and excellent high
frequency characteristic : Cre=1.3pF typ.
Adoption of FBET process. Package Dimensions
unit:mm 2010C
[2SC4188]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collecor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Diss.
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Ordering number:ENN2557B
NPN Epitaxial Planar Silicon Transistor
2SC4188
Ultrahigh-Definition CRT Display Video Output Applications
Features
· High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high
frequency characteristic : Cre=1.3pF typ. · Adoption of FBET process.
Package Dimensions
unit:mm 2010C
[2SC4188]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.
C4188 Datasheet
