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Sanyo Electric Components Datasheet

C3790 Datasheet

2SC3790

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Ordering number:ENN2254
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1480/2SC3790
High-Definiton CRT Display
Video Output Applications
Features
· High breakdown voltage (VCEO300V).
· Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8pF (NPN), 2.3pF (PNP).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2042B
[2SA1480/2SC3790]
8.0
4.0
1.0 1.0
3.3
3.0
1.6
0.8
0.8
0.75 0.7
( ) : 2SA1480
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()200V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE VCE=()10V, IC=()10mA
Gain-Bandwidth Product
fT VCE=()30V, IC=()10mA
* : The 2SA1480/2SC3790 are classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
123
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
()300
()300
()5
()100
()200
1.5
7
150
55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Ratings
min typ max
Unit
()0.1 µA
()0.1 µA
40* 320*
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4087TA, TS No.2254-1/5


Sanyo Electric Components Datasheet

C3790 Datasheet

2SC3790

No Preview Available !

Continued from preceding page.
Parameter
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
2SA1480/2SC3790
Symbol
Conditions
Cob VCB=()30V, f=1MHz
Cre VCB=()30V, f=1MHz
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()20mA, IB=()2mA
IC=()20mA, IB=()2mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
Ratings
min typ
2.6
(3.1)
1.8
(2.3)
()300
()300
()5
max
()0.6
()1.0
Unit
pF
pF
pF
pF
V
V
V
V
V
--20
2SA1480
--18
--16
--14
--12
IC -- VCE
--140µA
--120µA
--100µA
--80µA
--10 --60µA
--8
--6 --40µA
--4 --20µA
--2
IB=0
00 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Collector-to-Emitter Voltage, VCE V ITR03783
--10
2SA1480
IC -- VCE
--9 --60µA
--8 --50µA
--7 --40µA
--6
--5 --30µA
--4
--20µA
--3
--2 --10µA
--1
IB=0
0
0
--10 --20 --30 --40 --50 --60 --70 --80 --90 --100
Collector-to-Emitter Voltage, VCE V ITR03785
--120
2SA1480
IC -- VBE
VCE=--10V
--100
--80
--60
--40
--20
0
0
--0.2 --0.4 --0.6 --0.8 --1.0
Base-to-Emitter Voltage, VBE V ITR03787
20
2SC3790
18
16
IC -- VCE
120µA
100µA
14
80µA
12
10 60µA
8
40µA
6
4 20µA
2
IB=0
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE V ITR03784
10
2SC3790
IC -- VCE
9 60µA
8 50µA
7 40µA
6
5 30µA
4
20µA
3
2 10µA
1
0 IB=0
0 10 20 30 40 50 60 70 80 90 100
Collector-to-Emitter Voltage, VCE V ITR03786
120
2SC3790
IC -- VBE
VCE=10V
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
Base-to-Emitter Voltage, VBE V ITR03788
No.2254-2/5


Part Number C3790
Description 2SC3790
Maker Sanyo
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C3790 Datasheet PDF






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