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Sanyo Electric Components Datasheet

C3749 Datasheet

2SC3749

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Ordering number:EN1968A
NPN Triple Diffused Planar Silicon Transistor
2SC3749
500V/3A Switching Regulator Applications
Features
· High breakdown voltage and high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041A
[2SC3749]
Specifications
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
PW300µs, Duty Cycle10%
Tc=25˚C
Ratings
800
500
7
3
6
1
25
150
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=500V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.3A
VCE=5V, IC=1.5A
VCE=10V, IC=0.3A
VCB=10V, f=1MHz
Ratings
min typ
15*
8
18
50
max
10
10
50*
* : The hFE1 of the 2SC3749 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
15 L 30 20 M 40 30 N 50
Unit
V
V
V
A
A
A
W
˚C
˚C
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/4237AT/2046KI, TS No.1968–1/4


Sanyo Electric Components Datasheet

C3749 Datasheet

2SC3749

No Preview Available !

Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
2SC3749
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=1.5A, IB1=–IB2=0.6A, L=2mH, Clamped
VCC=200V, 5IB1=–2.5IB2=IC=2A, RL=100
VCC=200V, 5IB1=–2.5IB2=IC=2A, RL=100
VCC=200V, 5IB1=–2.5IB2=IC=2A, RL=100
Ratings
min typ
800
500
7
500
max
1.0
1.5
0.5
3.0
0.3
Unit
V
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
No.1968–2/4


Part Number C3749
Description 2SC3749
Maker Sanyo
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C3749 Datasheet PDF






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