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Sanyo Electric Components Datasheet

C3708 Datasheet

2SC3708

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Ordering number:ENN2217A
PNP/NPN Epitaxial Planar Silicon Transistor
2SA1450/2SC3708
Low-Frequency Driver Applications
Features
· Adoption of FBET process.
· AF amp, AF power amp.
· High breakdown voltage : VCEO>80V
Package Dimensions
unit:mm
2003B
[2SA1450/2SC3708]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
( ) : 2SA1450
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=()60V, IE=0
Emitter Cutoff Current
IEBO VEB=()4V, IC=0
DC Current Gain
hFE1
hFE2
VCE=()5V, IC=()50mA
VCE=()5V, IC=()400mA
* : 2SA1450/2SC3708 are classified by 50mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
123
1.3 1.3
1 : Base
2 : Collector
3 : Emitter
SANYO : NP
Ratings
()100
()80
()5
()500
()800
()100
600
150
55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
()0.1 µA
()0.1 µA
100*
400*
60
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/D129MO/2197TA, TS No.2217-1/4


Sanyo Electric Components Datasheet

C3708 Datasheet

2SC3708

No Preview Available !

Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
2SA1450/2SC3708
Symbol
Conditions
fT VCE=()10V, IC=()10mA
Cob VCB=()10V, f=1MHz
VCE(sat) IC=()400mA, IB=()40mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()400mA, IB=()40mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
Ratings
min typ
120
(7)5
0.16
(0.2)
()0.9
100
80
5
max
(0.5)
()1.2
Unit
MHz
pF
V
V
V
V
V
V
--500
2SA1450
--400
--300
--200
IC -- VCE
14mA
1120m8mAmAA
6mA
4mA
2mA
--100
IB=0
0
0
--0.2 --0.4 --0.6 --0.8 --1.0
Collector-to-Emitter Voltage, VCE – V ITR03633
--20
2SA1450
IC -- VCE
--80µA --70µA
--16 --60µA
--50µA
--12 --40µA
--8 --30µA
--20µA
--4 --10µA
0
0
--600
--500
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR03631
IC -- VBE
2SA1450
VCE=--5V
--400
--300
--200
--100
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR03635
600
500
400
300
200
100
00
20
16
12
8
4
0
0
600
500
400
300
200
100
0
0
IC -- VCE
14mA12mA
2SC3708
10mA
8mA
6mA
4mA
2mA
IB=0
0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE – V ITR03634
IC -- VCE
2SC3708
80µA
70µA
60µA
50µA
40µA
30µA
20µA
10µA
IB=0
10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR03632
IC -- VBE
2SC3708
VCE=5V
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR03636
No.2217-2/4


Part Number C3708
Description 2SC3708
Maker Sanyo
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C3708 Datasheet PDF






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