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Sanyo Electric Components Datasheet

C3651 Datasheet

2SC3651

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Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (VCEO100V).
· Low collector-to-emitter saturation voltage
(VCE(sat)0.5V).
· High VEBO (VEBO15V).
· Very small size making it easy to provide high-
density, small-sized hybrid IC’s.
Package Dimensions
unit:mm
2038
[2SC3651]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
* Mounted on ceramic board (250mm2×0.8mm)
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
PC*
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : CG
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=80V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
E : Emitter
C : Collector
B : Base
SANYO : PCP
(Bottom view)
Ratings
120
100
15
200
300
500
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
mW
W
˚C
˚C
Ratings
min typ
500 1000
400
150
6.5
max
0.1
0.1
2000
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2098HA (KT)/4217KI/2145KI, TS No.1779–1/3


Sanyo Electric Components Datasheet

C3651 Datasheet

2SC3651

No Preview Available !

Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SC3651
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=100mA, IB=2mA
IC=100mA, IB=2mA
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
Ratings
min typ
0.15
0.85
120
100
15
max
0.5
1.2
Unit
V
V
V
V
V
No.1779–2/3


Part Number C3651
Description 2SC3651
Maker Sanyo
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C3651 Datasheet PDF






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