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C3651 - 2SC3651

Key Features

  • High DC current gain (hFE=500 to 2000).
  • High breakdown voltage (VCEO≥100V).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High VEBO (VEBO≥15V).
  • Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SC3651] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Puls.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · LF amplifiers, various drivers, muting circuit. Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SC3651] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature * Mounted on ceramic board (250mm2×0.