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Sanyo Electric Components Datasheet

C3650 Datasheet

2SC3650

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Ordering number : EN1780B
2SC3650
SANYO Semiconductors
DATA SHEET
2SC3650
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
LF amplifiers, various drivers, muting circuit.
Features
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)0.5V).
Large current capacity (IC=1.2A).
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : CF
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm20.8mm)
Ratings
30
25
15
1.2
2
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
www.semiconductor-sanyo.com/network
31010LA TK IM / 61704TN (PC)/N2098HA (KT)/4227KI/3185KI, TS No.1780-1/4


Sanyo Electric Components Datasheet

C3650 Datasheet

2SC3650

No Preview Available !

2SC3650
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Package Dimensions
unit : mm (typ)
7007B-004
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=20V, IE=0A
VEB=10V, IC=0A
VCE=5V, IC=500mA
VCE=5V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=500mA, IB=10mA
IC=500mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, IB=0A
IE=10μA, IC=0A
Ratings
min typ
800 1500
600
220
17
0.12
0.85
30
25
15
max
0.1
0.1
3200
Unit
μA
μA
MHz
pF
0.5 V
1.2 V
V
V
V
1000
800
600
400
200
0
0
900μA
IC -- VCE
870000μμAA600μA
500μA
400μA
300μA
200μA
100μA
IB=0μA
4 8 12 16 20
Collector-to-Emitter Voltage, VCE -- V ITR05748
2000
1600
1200
800
400
0
0
IC -- VCE
20mA
181m6mAA Pulse
14mA 12mA
10mA
8mA
6mA
4mA
2mA
IB=0mA
0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE -- V ITR05749
No.1780-2/4


Part Number C3650
Description 2SC3650
Maker Sanyo
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C3650 Datasheet PDF






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