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C3647 - 2SC3647

Key Features

  • Adoption of FBET, MBIT processes.
  • High breakdown voltage and large current capacity.
  • Fast switching speed.
  • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperatu.

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Full PDF Text Transcription for C3647 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for C3647. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : EN2006D 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applicati...

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N Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8m

More Datasheets from SANYO (now Panasonic)

Part Number Description
C3643 2SC3643
C3644 2SC3644
C3645 2SC3645
C3646 2SC3646
C3648 2SC3648
C3649 2SC3649
C3600 2SC3600
C3637 2SC3637
C3638 2SC3638
C3650 2SC3650