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Sanyo Electric Components Datasheet

C3647 Datasheet

2SC3647

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Ordering number : EN2006D
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching
Applications
Features
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs
Specications ( ) : 2SA1417
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
(--)120
(--)100
(--)6
(--)2
(--)3
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SA1417S-TD-E
2SA1417T-TD-E
1.5 2SC3647S-TD-E
2SC3647T-TD-E
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
1
0.4
2
0.5
1.5
3.0
3
0.4
0.75
Bottom View
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
TD
Marking
RANK
RANK
2SA1417
2SC3647
Electrical Connection
22
11
3
2SA1417
3
2SC3647
http://www.sanyosemi.com/en/network/
90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7


Sanyo Electric Components Datasheet

C3647 Datasheet

2SC3647

No Preview Available !

2SA1417 / 2SC3647
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
VCE=(--)10V, IC=(--)100mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)100mA
IC=(--)1A, IB=(--)100mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
See specied Test Circuit.
* : The 2SA1417 / 2S3647 are classied by 100mA hFE as follws :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20μs
D.C.1%
IB1
IB2
OUTPUT
INPUT
VR
RB
RL
50Ω +
+
100μF
470μF
VBE= --5V
VCC=50V
IC=10IB1= --10IB2=0.7A
For PNP, the polarity is reversed.
Ordering Information
Device
2SA1417S-TD-E
2SA1417T-TD-E
2SC3647S-TD-E
2SC3647T-TD-E
Package
PCP
PCP
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
Ratings
min typ
100*
(--)120
(--)100
(--)6
120
(25)16
(--0.22)0.13
(--)0.85
(80)80
(750)1000
(40)50
max
(--)100
(--)100
400*
(--0.6)0.4
(--)1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
ns
ns
ns
memo
Pb Free
No.2006-2/7


Part Number C3647
Description 2SC3647
Maker Sanyo
PDF Download

C3647 Datasheet PDF






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