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C3645 - 2SC3645

Features

  • Adoption of FBET process.
  • High breakdown voltage (VCEO=160V).
  • Excellent linearity of hFE and small Cob.
  • Fast switching speed.
  • Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Coll.

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Full PDF Text Transcription

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Ordering number:ENN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features · Adoption of FBET process. · High breakdown voltage (VCEO=160V). · Excellent linearity of hFE and small Cob. · Fast switching speed. · Ultrasmall size marking it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1415/2SC3645] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1415 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC1 PC2 Tj Tstg Electrical Characteristics at Ta = 25˚C 0.
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