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C3644 - 2SC3644

Key Features

  • High reliability (Adoption of HVP process).
  • High speed.
  • High breakdown voltage.
  • Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3644] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
C3643 2SC3643
C3645 2SC3645
C3646 2SC3646
C3647 2SC3647
C3648 2SC3648

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · High speed. · High breakdown voltage. · Adoption of MBIT process.