C3638
Features
- High reliability (Adoption of HVP process).
- Fast speed.
- High breakdown voltage.
- Adoption of MBIT process.
Package Dimensions unit:mm 2022A
[2SC3638]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time
Symbol
Conditions
ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) h FE tstg tf
VCB=500V, IE=0 VCE=900V, RBE=0 IC=100m A, IB=0 VEB=5V, IC=0 IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=5V, IC=1.4A IC=7A, IB1=1.4A, IB2=- 2.8A IC=7A, IB1=1.4A, IB2=- 2.8A
1 : Base 2 : Collector 3 :...
