Adoption of MBIT process. Package Dimensions
unit:mm 2022A
[2SC3638]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Tc=25˚C
Conditions
Electrical.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C3638. For precise diagrams, and layout, please refer to the original PDF.
Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High r...
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RT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.
C3638 Datasheet
