* Fast switching speed.
* Low saturation voltage.
* Adoption of MBIT process. NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Hor.

Package Dimensions unit:mm 2010C [2SC3591] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emi.

C3595

C3596

C3597

C3598

C3599

C350

C3500

C3502

C3503

C3504

C3505

C3506

C3507

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