* Adoption of FBET process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V.

Applications
* LF general-purpose amplifiers, various drivers, muting circuit. Features
* Adoption of FBET proc.

C3570

C3577

C350

C3500

C3502

C3503

C3504

C3505

C3506

C3507

C3514

C3515

C3518-Z

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