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Sanyo Electric Components Datasheet

C3576 Datasheet

2SC3576

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Ordering number:EN1799D
NPN Epitaxial Planar Silicon Transistor
2SC3576
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
· LF general-purpose amplifiers, various drivers,
muting circuit.
Features
· Adoption of FBET process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage
(VCE(sat)0.5V).
· High VEBO (VEBO15V).
Package Dimensions
unit:mm
2033
[2SC3576]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=20V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
IC=200mA, IB=4mA
IC=200mA, IB=4mA
B : Base
C : Collector
E : Emitter
SANYO : SPA
Ratings
30
25
15
300
500
60
300
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ
800 1500
250
2.7
0.12
0.85
max
0.1
0.1
3200
0.5
1.2
Unit
µA
µA
MHz
pF
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2098HA (KT)/6140MO/4227KI/N275KI/3D185KI, TS No.1799–1/3


Sanyo Electric Components Datasheet

C3576 Datasheet

2SC3576

No Preview Available !

Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SC3576
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
Ratings
min typ
30
25
15
max
Unit
V
V
V
No.1799–2/3


Part Number C3576
Description 2SC3576
Maker Sanyo
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C3576 Datasheet PDF






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