* Adoption of FBET process.
* High DC current gain (hFE=500 to 2000).
* High breakdown voltage (VCEO≥100V).
* Low collector-to-emitter saturation voltage .

Applications
* AF amplifier, various driver, muting circuit. Features
* Adoption of FBET process.
* High DC.

C3496

C3496A

C34-L60

C34-L70

C34-L80

C3400

C3402

C3405

C3415

C3419

C3420

C3421

C3422

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