B1396 transistor equivalent, pnp epitaxial planar silicon transistor.
* Adoption of FBET, MBIT processes.
* Large current capacity.
* Low collector-to-emitter saturation voltage.
* Small size making it easy to provide high-d.
Features
* Adoption of FBET, MBIT processes.
* Large current capacity.
* Low collector-to-emitter saturatio.
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