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Sanyo Electric Components Datasheet

B1270 Datasheet

PNP/NPN Epitaxial Planar Type Silicon Transistors

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Ordering number:EN2266A
PNP/NPN Epitaxial Planar Type Silicon Transistors
2SB1270/2SD1906
High-Current Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Features
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage.
· Large current capacity.
Package Dimensions
unit:mm
2049B
[2SB1270/2SD1906]
( ) : 2SB1270
Specifications
E : Emitter
C : Collector
B : Base
SANYO :TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(–)90
(–)80
(–)6
(–)5
(–)9
1.65
30
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)3A
VCE=(–)5V, IC=(–)1A
IC=(–)3A, IB=(–)0.3A
Ratings
min typ
70*
30
20
max
(–)0.1
(–)0.1
280*
0.4
(–0.5)
Unit
mA
mA
MHz
V
V
* : The 2SB1270/2SD1906 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1598HA (KT)/D251MH/4097TA, TS No.2266–1/4


Sanyo Electric Components Datasheet

B1270 Datasheet

PNP/NPN Epitaxial Planar Type Silicon Transistors

No Preview Available !

Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SB1270/2SD1906
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)1mA, IE=0
IC=(–)1mA, RBE=
IE=(–)1mA, IC=0
See specified test circuit.
tstg See specified test circuit.
tf See specified test circuit.
Switching Time Test Circuit
Ratings
min typ
(–)90
(–)80
(–)6
(0.2)
0.1
(0.7)
1.2
(0.2)
0.4
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
No.2266–2/4


Part Number B1270
Description PNP/NPN Epitaxial Planar Type Silicon Transistors
Maker Sanyo
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B1270 Datasheet PDF






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