B1230
B1230 is PNP / NPN Epitaxial Planar Silicon Transistors manufactured by SANYO.
Features
- Large current capacity and wide ASO.
- Low saturation voltage.
Specifications ( ) : 2SB1230
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP IB
Tj Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage
Symbol
ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat)
Conditions
VCB=(--)100V, IE=0A VEB=(--)5V, IC=0A VCE=(--)2V, IC=(--)1.5A VCE=(--)2V, IC=(--)6A IC=(--)6A, IB=(--)0.6A IC=(--)6A, IB=(--)0.6A
- : For the h FE1 of the 2SB1230 / 2SD1840, specify two ranks or more in principle.
Rank
Q h FE
50 to 100
70 to 140
Ratings (--)110 (--)100 (--)6 (--)15 (--)25 (--)5 3.0 100 150
--55 to +150
Unit V V V A A A W W °C °C min
50- 20
Ratings typ max (--)0.1 (--)0.1 140-
Unit m A m A
(--)0.8
(--)1.5
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