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Sanyo Electric Components Datasheet

B1230 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

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Ordering number : EN3259A
2SB1230 / 2SD1840
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1230 / 2SD1840 High-Current Switching
Applications
Applications
Motor drivers, relay drivers, converters and other general high-current switching applications.
Features
Large current capacity and wide ASO.
Low saturation voltage.
Specifications ( ) : 2SB1230
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Conditions
VCB=(--)100V, IE=0A
VEB=(--)5V, IC=0A
VCE=(--)2V, IC=(--)1.5A
VCE=(--)2V, IC=(--)6A
IC=(--)6A, IB=(--)0.6A
IC=(--)6A, IB=(--)0.6A
* : For the hFE1 of the 2SB1230 / 2SD1840, specify two ranks or more in principle.
Rank
P
Q
hFE
50 to 100
70 to 140
Ratings
(--)110
(--)100
(--)6
(--)15
(--)25
(--)5
3.0
100
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
50*
20
Ratings
typ
max
(--)0.1
(--)0.1
140*
Unit
mA
mA
(--)0.8
V
(--)1.5
V
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 12006DA MS IM TB-00002034 / D1003TN (KT) / 92098HA (KT) / 9140MH, JK (KOTO) No.3259-1/4


Sanyo Electric Components Datasheet

B1230 Datasheet

PNP / NPN Epitaxial Planar Silicon Transistors

No Preview Available !

Continued from preceding page.
Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB1230 / 2SD1840
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(--)1mA, IE=0A
IC=(--)5mA, RBE=
IE=(--)1mA, IC=0A
Package Dimensions
unit : mm
7503-003
15.6
14.0 3.2
4.8
2.0
min
(--)110
(--)100
(--)6
Ratings
typ
max
Unit
V
V
V
1.6
2.0
1.0
1 23
0.6
5.45 5.45
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
IC -- VCE
--18
2SB1230
--16
--14 1.0A
0.5A
--12
0.3A
--10
0.2A
--8
0.1A
--6
--4 0.05A
--2
0 IB=0A
0 --1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE -- V ITR09378
IC -- VBE(ON)
--16
2SB1230
--14 VCE= --2V
--12
--10
--8
--6
--4
--2
0
0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
Base-to-Emitter ON Voltage, VBE(ON) -- V ITR09380
IC -- VCE
18
2SD1840
16
14 1.0A 0.5A
0.3A
12 0.2A
10
8
0.1A
6
0.05A
4
2
0 IB=0A
0 12345
Collector-to-Emitter Voltage, VCE -- V ITR09379
IC -- VBE(ON)
16
2SD1840
14 VCE=2V
12
10
8
6
4
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base-to-Emitter ON Voltage, VBE(ON) -- V ITR09381
No.3259-2/4


Part Number B1230
Description PNP / NPN Epitaxial Planar Silicon Transistors
Maker Sanyo
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