* Adoption of MBIT process.
* High breakdown voltage (VCEO≥400V).
* Excellent linearity of hFE. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused P.

Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 Specifications Absolute Maximum Ratings at Ta = 25˚C.

A1780

A1785

A1786

A1787

A17

A170

A1701

A1703

A1704

A1705

A1706

A1707

A1708

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