A1784 2SA1784
· Adoption of MBIT process.
· High breakdown voltage (VCEO≥400V).
· Excellent linearity of hFE.
PNP Epitaxial Planar Silicon Transistor NPN Triple Di.
Package Dimensions unit:mm 2064 [2SA17814/2SC4644] ( ) : 2SA1784 Specifications Absolute Maximum .
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