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A1370 - 2SA1370

Features

  • High breakdown voltage : VCEO≥200V.
  • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
  • Adoption of FBET process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1370 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempe.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
A1331 2SA1331
A1338 2SA1338
A1380 2SA1380
A1392 2SA1392

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN1412D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1370/2SC3467 High-Definition CRT Display, Video Output Applications Use · Color TV chroma output and high breakdown voltage driver. www.DataSheet4U.com Package Dimensions unit:mm 2006B [2SA1370/2SC3467] 6.0 5.0 Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.
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