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30C02SS - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Large current capacitance.
  • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA].
  • Ultrasmall package facilitates miniaturization in end products.
  • Small ON-resistance (Ron). Top View 1.4 0.25 3 12 0.45 0.2 0.3 0.8 0.3 1.4 [30C02SS] Side View 0.1 Bottom View 0.07 0.07 Specifications Absolute Maximum Ratings at Ta=25°C Side View 0.6 3 21 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Parameter Collector-to-B.

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Full PDF Text Transcription for 30C02SS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 30C02SS. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENN7367 30C02SS NPN Epitaxial Planar Silicon Transistor 30C02SS Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplif...

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ral-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive. Package Dimensions unit : mm 2159A Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). Top View 1.4 0.25 3 12 0.45 0.2 0.3 0.8 0.3 1.4 [30C02SS] Side View 0.1 Bottom View 0.07 0.07 Specifications Absolute Maximum Ratings at Ta=25°C Side View 0.

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