Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA].
Ultrasmall package facilitates miniaturization in end products.
Small ON-resistance (Ron). Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperat.
Full PDF Text Transcription for 30C02MH (Reference)
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Ordering number : EN7364A 30C02MH SANYO Semiconductors DATA SHEET 30C02MH NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications Appl...
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on Transistor Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive. Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron).
30C02MH Datasheet
