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30C02CH - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Large current capacitance.
  • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA].
  • Ultrasmall package facilitates miniaturization in end products.
  • Small ON-resistance (Ron). 0.2 [30C02CH] 2.9 0.4 3 0.15 0.05 0.6 1.6 0.6 2.8 12 1.9 1 : Base 2 : Emitter 3 : Collector 0.7 0.2 0.9 SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em.

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Full PDF Text Transcription for 30C02CH (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 30C02CH. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENN7363 30C02CH NPN Epitaxial Planar Silicon Transistor 30C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplif...

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ral-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive. Package Dimensions unit : mm 2150A Features • Large current capacitance. • Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA]. • Ultrasmall package facilitates miniaturization in end products. • Small ON-resistance (Ron). 0.2 [30C02CH] 2.9 0.4 3 0.15 0.05 0.6 1.6 0.6 2.8 12 1.9 1 : Base 2 : Emitter 3 : Collector 0.7 0.2 0.

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