Datasheet4U Logo Datasheet4U.com

30C01SS - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Large current capacitance.
  • Low collector-to-emitter saturation voltage(resistance). RCE(sat) typ=0.70Ω[IC=0.4A, IB=20mA].
  • Ultrasmall and thin flat lead package (1.4mm!0.8mm!0.6mm).
  • Small ON-resistance (Ron). Top View 1.4 0.25 3 12 0.45 0.2 0.3 0.8 0.3 1.4 [30C01SS] Side View 0.1 Bottom View 0.07 0.07 Specifications Absolute Maximum Ratings at Ta=25°C Side View 0.6 3 21 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Parameter Collector-to-Base Vo.

📥 Download Datasheet

Full PDF Text Transcription for 30C01SS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 30C01SS. For precise diagrams, and layout, please refer to the original PDF.

Ordering number : ENN7523 30C01SS NPN Epitaxial Planar Silicon Transistor 30C01SS Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplif...

View more extracted text
ral-Purpose Amplifier Applications Applications • Low-frequency Amplifier, muting circuit. Package Dimensions unit : mm 2159A Features • Large current capacitance. • Low collector-to-emitter saturation voltage(resistance). RCE(sat) typ=0.70Ω[IC=0.4A, IB=20mA]. • Ultrasmall and thin flat lead package (1.4mm!0.8mm!0.6mm). • Small ON-resistance (Ron). Top View 1.4 0.25 3 12 0.45 0.2 0.3 0.8 0.3 1.4 [30C01SS] Side View 0.1 Bottom View 0.07 0.07 Specifications Absolute Maximum Ratings at Ta=25°C Side View 0.

More Datasheets from SANYO (now Panasonic)

Part Number Description
30C01SP NPN Epitaxial Planar Silicon Transistor
30C02CH NPN Epitaxial Planar Silicon Transistor
30C02MH NPN Epitaxial Planar Silicon Transistor
30C02SS NPN Epitaxial Planar Silicon Transistor