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High hFE LOW VCE (sat)
2SC4495
Application : Audio Temperature Compensation and General Purpose
(Ta=25°C) 2SC4495 10max 10max 50min 500min 0.5max 40typ 30typ V MHz pF
13.0min
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4495 80 50 6 3 1 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1A, IB=20mA VCE=12V, IE=–0.1A VCB=10V,f=1MHz
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Unit
µA
V
16.9±0.3 8.4±0.2
µA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.
C4495 Datasheet
