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C4297 Datasheet

Silicon NPN Triple Diffused Planar Transistor

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2SC4297 www.DataSheet4U.com
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4297
500
400
10
12(Pulse24)
4
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=7A
IC=7A, IB=1.4A
IC=7A, IB=1.4A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
200 28.5
7
10 –5 0.7
IB2
(A)
–1.4
ton
(µs)
1max
(Ta=25°C)
2SC4297
100max
100max
400min
10 to 30
0.5max
1.3max
10typ
105typ
Unit
µA
µA
V
V
V
MHz
pF
tstg
(µs)
3max
tf
(µs)
0.5max
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65 +-00..12
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
12
1A
10 800mA
600mA
8
400mA
6
200mA
4
IB=100mA
2
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
VCE(sat)
125˚C
–55˚C
0
0.02 0.05 0.1
0.5 1
5 10
Collector Current IC(A)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–30˚C
10
t on• t stg• t f– I C Characteristics (Typical)
8
5
VCC 200V
IC:IB1:–IB2=10:1:2
1
0.5
ton
tstg
θ j-a– t Characteristics
2
1
0.5
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10 12
0.1
0.5
tf
15
Collector Current IC(A)
0.1
10 1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
30
100µs
10
5
1
0.5 Without Heatsink
Natural Cooling
0.1
5
10 50 100
Collector-Emitter Voltage VCE(V)
500
Reverse Bias Safe Operating Area
30
10
5
1
Without Heatsink
Natural Cooling
0.5 L=3mH
–IB2=1A
Duty:less than 1%
0.1
5
10 50 100
Collector-Emitter Voltage VCE(V)
500
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0 50
100
Ambient Temperature Ta(˚C)
150
95


Part Number C4297
Description Silicon NPN Triple Diffused Planar Transistor
Maker Sanken electric
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C4297 Datasheet PDF






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