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C3831 Datasheet

Silicon NPN Transistor

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2SC3831
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3831
600
500
10
10(Pulse20)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=600V
VEB=10V
IC=25mA
VCE=4V, IC=5A
IC=5A, IB=1A
IC=5A, IB=1A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
(Ta=25°C)
2SC3831
1max
100max
500min
10 to 30
0.5max
1 . 3 max
8typ
105typ
Unit
mA
µA
V
V
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
200 40
5
10 –5 0.5
IB2
(A)
–1.0
ton
(µs)
1max
tstg
(µs)
4.5max
tf
(µs)
0.5max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
BCE
1.4
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
10
1A 800mA
8 600mA
400mA
6
4 200mA
100mA
2
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
10
8
6
4
0
0.02
VCE(sat)
125˚C
–5 5 ˚ C
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–55˚C
10
t on• t stg• t f– I C Characteristics (Typical)
10
5
VCC 200V
IC:IB1:IB2=10:1:–2
tstg
1
0.5 ton
θ j-a– t Characteristics
2
1
0.5
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10
0.1
0.2
tf
0.5 1
Collector Current IC(A)
5
0.1
10 1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
30
10 1ms 100µs
5
Reverse Bias Safe Operating Area
30
10
5
Pc–Ta Derating
100
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.02
8 10
50 100
Collector-Emitter Voltage VCE(V)
500 600
1
0.5
1
0.05
0.01
50
Without Heatsink
Natural Cooling
L=3mH
IB2 =–0.5A
Duty:less than 1%
100 500 600
Collector-Emitter Voltage VCE(V)
50
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
71


Part Number C3831
Description Silicon NPN Transistor
Maker Sanken electric
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C3831 Datasheet PDF






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