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C3679 Datasheet

Silicon NPN Triple Diffused Planar Transistor

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2SC3679
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Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings
Symbol
2SC3679
VCBO
VCEO
900
800
VEBO
7
IC 5(Pulse10)
IB 2.5
PC 100(Tc=25°C)
Tj 150
Tstg –55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=2A
IC=2A, IB=0.4A
IC=2A, IB=0.4A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
250 125 2
10 –5 0.3
IB2 ton
(A) (µs)
–1 1max
(Ta=25°C)
2SC3679 Unit
100max
100max
800min
µA
µA
V
10 to 30
0.5max
V
1.2max
V
6typ MHz
75typ
pF
tstg
(µs)
5max
tf
(µs)
1max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
5 700mA
600mA
500mA
4 400mA
300mA
3
200mA
2
IB=100mA
1
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
5
2
1 –55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
0
0.03 0.05
VCE(sat)
125˚C (Case
0.1 0.5 1
Collector Current IC(A)
5
10
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–55˚C
10
5
0.02
0.05
0.1 0.5 1
Collector Current IC(A)
5
t on• t stg• t f– I C Characteristics (Typical)
10
5 VCC 250V
IC:IB1:–IB2
=2:0.3:1Const.
tstg
1
0.5
0.2
0.1
tf
ton
0.5 1
Collector Current IC(A)
5
θ j-a– t Characteristics
2
1
0.5
0.1
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
20
10
5
10ms
100ms
1ms
100µs
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.01
5
10
50 100
500 1000
Collector-Emitter Voltage VCE(V)
68
Reverse Bias Safe Operating Area
20
10
5
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than1%
0.01
50
100 500
Collector-Emitter Voltage VCE(V)
1000
Pc–Ta Derating
100
50
3.5 Without Heatsink
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150


Part Number C3679
Description Silicon NPN Triple Diffused Planar Transistor
Maker Sanken electric
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