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2SC3834
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3834 200 120 8 7(Pulse14) 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Humidifier, DC-DC Converter, and General Purpose
(Ta=25°C) 2SC3834 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ V MHz pF
2.5 B C E 12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=8V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
V
16.0±0.7 8.8±0.2
a b
ø3.75±0.2
V
1.35
0.65 +0.2 -0.1 2.5 1.
2SC3834 Datasheet
