SKI04033 - N-channel Trench Power MOSFET

Sanken

Features

V(BR)DSS --------------------------------- 40 V (ID = 100 µA).
ID ---------------------------------------------------------- 80 A.
RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A).
Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A).
Low Total Gate Charge.
High Speed Switching.
Low On-Resistance.
Capable of 4.5 V Gate Drive.
100 % UIL Tested.
RoHS Compliant Package TO-263 (4) D (1) (2) (3) GDS.

SKI04033 n-channel trench power mosfet by Sanken - Datasheet Preview

Datasheet Details

Part number	SKI04033
Manufacturer	Sanken
File Size	591.90 KB
Description	N-channel Trench Power MOSFET
Datasheet	SKI04033 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI04033 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A)  Qg------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.

Published: Apr 18, 2016 |