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2SC3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SC3833 500 400 10
12(Pulse24) 4
100(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1A VCB=10V, f=1MHz
(Ta=25°C)
2SC3833 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ
Unit µA µA V
V V MHz pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
200 28.5
7
10 –5 0.7
IB2 (A)
–1.4
ton (µs)
1.0max
tstg (µs)
3.
C3833 Datasheet
