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MOS FET 2SK3803 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±85
A
ID (pulse)*1
±170
A
PD
100 (Tc=25ºC)
W
EAS*2
730
mJ
Tch
150
ºC
Tstg
–55 to +150
ºC
* 1: PW 100µs, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 50Ω
Electrical Characteristics
Symbol
Test Conditions
V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr
ID = 100µA, VGS = 0V VGS = ±15V
VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A
VDS = 10V f = 1.0MHz VGS = 0V
ID = 42A VDD = 20V, RG = 22Ω
VGS = 10V
ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/µs
(Ta=25ºC)
Ratings min typ max Unit
40
V
±10 µA
100 µA
2.0
4.0 V
50
S
2.1 3.