logo

1N5817W Datasheet, Sangdest Microelectronics

1N5817W diode equivalent, schottky barrier diode.

1N5817W Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 125.40KB)

1N5817W Datasheet

Features and benefits


* Metal silicon junction, majority carrier conduction
* Guarding for overvoltage protection
* Low power loss, high efficiency
* High current capability <.

Application

Mechanical Data:
* Case: SOD-123FL molded plastic body
* Terminals: Solder plated, solderable per MIL-STD-750, M.

Image gallery

1N5817W Page 1 1N5817W Page 2 1N5817W Page 3

TAGS

1N5817W
SCHOTTKY
BARRIER
DIODE
Sangdest Microelectronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts