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SDS120J002D2 - SiC Schottky Barrier Diode

General Description

VRRM 1200 V IF(135℃) 3.9 A QC 12 nC TO-252-2L PIN 1 PIN 2 CASE Device SDS120J002D2 Package TO-252-2L Marking DS120002D2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM V

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Datasheet Details

Part number SDS120J002D2
Manufacturer Sanan
File Size 790.23 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SDS120J002D2 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet 1200V/2A SiC Schottky Barrier Diode Characteristic  Zero Reverse Recovery Current  Positive temperature coefficient  Temperature-independent performance  High-speed switching  Low switching loss  Low heat dissipation requirements Application  Switching power supply  Power factor correction  Motor drive,traction  Charging pile SDS120J002D2 Product Description VRRM 1200 V IF(135℃) 3.