SW70N10V mosfet equivalent, n-channel mosfet.
* High ruggedness
* Low RDS(ON) (Typ 12.4mΩ)@VGS=4.5V
Low RDS(ON) (Typ 11.7mΩ)@VGS=10V
* Low Gate Charge (Typ 117nC)
* Improved dv/dt Capability
* 100.
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This power MOSFET is produced with advanced technology of SAMWIN.
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This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche c.
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