SW47N65K mosfet equivalent, n-channel mosfet.
* High ruggedness
* Low RDS(ON) (Typ 60mΩ)@VGS=10V
* Low Gate Charge (Typ 152nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
* Application.
This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalan.
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