SW160R02VT mosfet equivalent, n-channel mosfet.
N-channel Enhanced mode DFN3*3 MOSFET
* High ruggedness
* Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V
(Typ 9.4mΩ)@VGS=4.5V
* Low Gate Charge (Typ 15.4nC)
* Improv.
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This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
char.
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