PC100 Datasheet (Samsung Semiconductor)

Samsung Semiconductor

PC100

Overview

Performance range Part No. Max Freq. (Speed) KMM366S1623CT-G8 125MHz (8ns @ CL=3) KMM366S1623CT-GH 100MHz (10ns @ CL=2) KMM366S1623CT-GL 100MHz (10ns @ CL=3) Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence detect with EEPROM PCB : Height (1,375mil), double sided component * * * * * * *

Part Number	Manufacturer	Description
PC100-323-620	Siemens Semiconductor Group	3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
HB52E649E12-A6B	Elpida Memory	512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 100 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
PC100-323-620	Siemens Semiconductor Group	3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
HB52E649E12-B6B	Elpida Memory	512 MB Registered SDRAM DIMM 64-Mword 72-bit/ 100 MHz Memory Bus/ 1-Bank Module (18 pcs of 64 M 4 Components) PC100 SDRAM
PC100-222-620	Siemens Semiconductor Group	3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules