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M366S3323CT0-C75 - PC133 Unbuffered DIMM

Description

The Samsung M366S3323CT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S3323CT0 consists of sixteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Features

  • 0ns CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable IO = 0 mA Page burst 4Banks activated tCCD = 2CLKs tRC ≥ tRC(min) CKE ≤ 0.2V 1,200 16 16 320 mA 112 80 80 480 320 mA mA -75 tCC=10ns 1,120 mA 1 Unit Note mA mA Operat.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M366S3323CT0 Revision History Revision 0.0 (May, 2000) • PC133 first published. PC133 Unbuffered DIMM Revision 0.1 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics. m o c . u 4 t e e h s a t a .d w w w REV. 0.1 July. 2000 www.DataSheet4U.com M366S3323CT0 M366S3323CT0 SDRAM DIMM PC133 Unbuffered DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S3323CT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S3323CT0 consists of sixteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.
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