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KBY00U00VA-B450 Datasheet, Samsung semiconductor

KBY00U00VA-B450 2/cs equivalent, 8gb ddp (512m x16) nand flash + 4gb (64m x32 + 64m x32) 2/cs.

KBY00U00VA-B450 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.78MB)

KBY00U00VA-B450 Datasheet

Features and benefits


* Operating Temperature : -25°C ~ 85°C
* Package : 137 FBGA Type - 10.5mmx13mmx1.2mmt, 0.8mm pitch
* Voltage Supply - 1.8V Device : 1.7V.

Application

where product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

The KBY00U00VA is a Multi Chip Package Memory which combines 8Gbit DDP Nand Flash Memory(organized with two pieces of 4Gbit Nand Flash Memory) and 4Gbit DDR synchronous high data rate Dynamic RAM(organized with two pieces of 2Gbit Mobile DDR SDRAM). .

Image gallery

KBY00U00VA-B450 Page 1 KBY00U00VA-B450 Page 2 KBY00U00VA-B450 Page 3

TAGS

KBY00U00VA-B450
8Gb
DDP
512M
x16
NAND
Flash
4Gb
64M
x32
64M
x32
Samsung semiconductor

Manufacturer


Samsung semiconductor

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