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K9F5608Q0B-DIB0 - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

Download the K9F5608Q0B-DIB0 datasheet PDF. This datasheet also covers the K9F variant, as both devices belong to the same 32m x 8 bit / 16m x 16 bit nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity.

The device is offered in 1.8V or 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

Features

  • and specifications including FAQ, please refer to Samsung’ s Flash web site. http://www. intl. samsungsemi. com/Memory/Flash/datasheets. html The attached datasheets are prepared and approved by.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K9F-5608U.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K9F5608Q0C NAND Flash Memory Samsung
K9F5608Q0C-DCB0 1.8V NAND Flash Errata Samsung
K9F5608Q0C-DIB0 1.8V NAND Flash Errata Samsung
K9F5608Q0C-HCB0 1.8V NAND Flash Errata Samsung
K9F5608Q0C-HIB0 1.8V NAND Flash Errata Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K9F5608Q0B-DCB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608Q0B-HCB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608Q0B-HIB0 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608QOC (K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608D0D 32M x 8 Bit NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0,HIB0 K9F5616U0B-YCB0,YIB0,PCB0,PIB0 K9F5616U0B-DCB0,DIB0,HCB0,HIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don’ t care ==> A3 ~ A7 are "L" 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter is changed. tRP(min.) : 30ns --> 25ns 3.
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