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K8P5516UZB - 256Mb B-die NOR FLASH

General Description

of Hardwre Protection in Figure 8: Enhanced Block Protection/Unprotection is changed from"A outermost block on both ends of flash array locked" to "Highest or lowest block locked" DC Characteristics Table is revised.

- "Read While Program Current"(I2) and "Read While Erase Current"(I3) are deleted.

Key Features

  • 5 2.0.

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Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

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K8P5616UZB 256Mb B-die Page NOR FLASH
K8P2716UZC 128Mb C-die Page NOR Flash
K8P2815UQC 128Mb C-die NOR FLASH

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Rev. 1.3, May. 2010 K8P5516UZB 256Mb B-die NOR FLASH 56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V http://www.DataSheet4U.net/ datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.