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K7M161835B Datasheet, Samsung semiconductor

K7M161835B ntram equivalent, 512kx36 & 1mx18 flow-through ntram.

K7M161835B Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 427.71KB)

K7M161835B Datasheet
K7M161835B
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 427.71KB)

K7M161835B Datasheet

Features and benefits


* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* Byte Writable Function.
* Enable clock and suspend operation.
* Single READ/WRITE control pin.
* Self-Timed .

Application

where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, .

Description

The K7M163635B and K7M161835B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output .

Image gallery

K7M161835B Page 1 K7M161835B Page 2 K7M161835B Page 3

TAGS

K7M161835B
512Kx36
1Mx18
Flow-Through
NtRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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